Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
Document Type and Number:
WIPO Patent Application WO/2023/279518
Kind Code:
A1
Abstract:
Embodiments of the present application provide a semiconductor structure and a method for forming same. The method for forming the semiconductor structure comprises: providing active regions and first isolation structures disposed at intervals; forming a second isolation structure, the second isolation structure being located between adjacent active regions, and the top surface of the second isolation structure being higher than or flush with the top surfaces of the active regions; forming a mask layer, pattern openings of the mask layer exposing parts of the top surfaces of the active regions, and the second isolation structure being located on two opposite sides of parts of the active regions; etching parts of the active regions exposed by the pattern openings and parts of the first isolation structures to form middle grooves, the middle grooves at least exposing parts of the surfaces of the active regions; and forming a bit line structure, the bit line structure being electrically connected to the top surfaces of the active regions exposed by the middle grooves.
Inventors:
PAN JUNBO (CN)
WANG JINGHAO (CN)
WANG JINGHAO (CN)
Application Number:
PCT/CN2021/117286
Publication Date:
January 12, 2023
Filing Date:
September 08, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/762
Foreign References:
| CN111640743A | 2020-09-08 | |||
| CN104282616A | 2015-01-14 | |||
| CN101047151A | 2007-10-03 | |||
| CN112018080A | 2020-12-01 | |||
| CN102412179A | 2012-04-11 | |||
| US10868174B1 | 2020-12-15 |
Attorney, Agent or Firm:
SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)
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