Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
Document Type and Number:
WIPO Patent Application WO/2024/036747
Kind Code:
A1
Abstract:
The present disclosure relates to a semiconductor structure and a method for forming same. The method for forming the semiconductor structure comprises the following steps: forming a substrate, and a plurality of active regions which are located above the substrate and are arranged at intervals in a first direction, wherein the first direction is parallel to the top surface of the substrate; and modifying the substrate below the active regions from a side surface of the substrate to form a bit line which extends in the first direction and is electrically connected to the plurality of active regions arranged at intervals in the first direction. According to the present disclosure, a thick bit line can be formed, such that the resistance of the bit line can be effectively reduced, and the electrical performance of the semiconductor structure is improved.
Inventors:
JIANG YI (CN)
HAN QINGHUA (CN)
XIAO DEYUAN (CN)
QIU YUNSONG (CN)
HAN QINGHUA (CN)
XIAO DEYUAN (CN)
QIU YUNSONG (CN)
Application Number:
PCT/CN2022/126965
Publication Date:
February 22, 2024
Filing Date:
October 24, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L29/78; H01L27/10
Foreign References:
| CN114420644A | 2022-04-29 | |||
| CN114121818A | 2022-03-01 | |||
| US20060113587A1 | 2006-06-01 | |||
| CN109285836A | 2019-01-29 | |||
| CN103681510A | 2014-03-26 |
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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