Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
Document Type and Number:
WIPO Patent Application WO/2024/037347
Kind Code:
A1
Abstract:
A semiconductor structure and a method for forming same, wherein the method for forming the semiconductor structure comprises: forming on a semiconductor substrate (200) linear semiconductor patterns (203) extending in a first direction and arranged in an array in a second direction and a vertical direction, the linear semiconductor patterns comprising a channel region (21) and a drain region (22) connected to the channel region (21), and a first insulating layer (206) being formed between the linear semiconductor patterns (203); etching a portion of the first insulating layer (206) on one side of the drain region (22) to form a first opening (215); performing ion doping on the drain region (22) exposed by the first opening (215) so as to form a grounding doped region (216) in the drain region (22), the grounding doped region (216) being connected to the channel region (21); filling the first opening (215) with a conductive material to form a grounding conductive plug (217), the grounding conductive plug (217) being electrically connected to the grounding doped region (216) and to the semiconductor substrate (200).
Inventors:
LIN CHAO (CN)
Application Number:
PCT/CN2023/110898
Publication Date:
February 22, 2024
Filing Date:
August 03, 2023
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/768; H01L23/538; H01L29/08
Foreign References:
| CN114864503A | 2022-08-05 | |||
| CN106129012A | 2016-11-16 | |||
| CN114864501A | 2022-08-05 | |||
| US20070210374A1 | 2007-09-13 |
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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