Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2024/082595
Kind Code:
A1
Abstract:
Provided in the embodiments of the present disclosure are a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure comprises: a substrate; a first transistor and a second transistor, which are sequentially arranged on the surface of the substrate in a first direction, wherein the first transistor comprises a first active structure and a first gate structure, the first active structure comprising a first electrode, a first channel and a second electrode, which are sequentially arranged in a second direction, and the first gate structure covering a first surface of the first channel; and the second transistor comprises a second active structure and a second gate structure, the second active structure comprising a third electrode, a second channel and a fourth electrode, which are sequentially arranged in the second direction, and the second gate structure covering a second surface of the second channel; and a first conductive structure, which is used for electrically connecting the first electrode and the second gate structure.
Inventors:
LIU XIAOYANG (CN)
Application Number:
PCT/CN2023/090552
Publication Date:
April 25, 2024
Filing Date:
April 25, 2023
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H10B12/00
Domestic Patent References:
| WO2022188010A1 | 2022-09-15 |
Foreign References:
| CN113594163A | 2021-11-02 | |||
| CN114446963A | 2022-05-06 | |||
| CN113594162A | 2021-11-02 | |||
| CN1983601A | 2007-06-20 | |||
| US20060011972A1 | 2006-01-19 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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