Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/037547
Kind Code:
A1
Abstract:
A semiconductor structure and a method for manufacturing same, and a semiconductor device. The semiconductor structure comprises: a substrate (110); a first oxide layer (120) formed on the substrate (110); a plurality of first conductive lines (130) formed on the first oxide layer (120) and arranged in a particular direction; a second oxide layer (140) formed on the first oxide layer (120) and the plurality of first conductive lines (130), wherein a plurality of through holes (11) are formed in the second oxide layer (140), such that either end of each first conductive line (130) is respectively connected to one through hole (11), and the through hole (11) is filled with a conductive material; and a plurality of second conductive lines (150) formed on the second oxide layer (140) and respectively connected to one or more through holes (11), such that the plurality of first conductive lines (130), the plurality of through holes (11), and the plurality of second conductive lines (150) jointly form a spirally connected conductive structure.
Inventors:
HAN ZHIYI (CN)
CHEN XI (CN)
CHEN XI (CN)
Application Number:
PCT/CN2023/113183
Publication Date:
February 22, 2024
Filing Date:
August 15, 2023
Export Citation:
Assignee:
HAN ZHIYI (CN)
CHEN XI (CN)
CHEN XI (CN)
International Classes:
H01F27/28; H01F27/29; H01F41/04
Foreign References:
| CN114582586A | 2022-06-03 | |||
| CN114883083A | 2022-08-09 | |||
| CN109215979A | 2019-01-15 | |||
| CN113053851A | 2021-06-29 | |||
| CN115331927A | 2022-11-11 | |||
| US20150371764A1 | 2015-12-24 |
Attorney, Agent or Firm:
BEIJING GUOZHIDAMING INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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