Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2024/051232
Kind Code:
A1
Abstract:
A method for manufacturing a semiconductor structure, and a semiconductor structure. The method for manufacturing a semiconductor structure comprises: providing a substrate (5), and forming, on the substrate (5), at least two stacked structures (100) and a connecting structure (200) located between the at least two stacked structures (100), wherein each stacked structure (100) comprises a plurality of layers of bit lines (11), the connecting structure (200) comprises a plurality of layers of connecting layers (21), and the connecting layers (21) and the bit lines (11) are respectively arranged on the same layer and are connected; forming a plurality of filling holes (23) in the connecting structure (200), and different filling holes (23) exposing the top surfaces of the connecting layers (21) on different layers; and forming contact layers (3) in the filling holes (23), and the contact layers (3) being connected to the connecting layers (21).
Inventors:
YANG MENGMENG (CN)
Application Number:
PCT/CN2023/098654
Publication Date:
March 14, 2024
Filing Date:
June 06, 2023
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/768; H01L23/538; H10B12/00
Foreign References:
| CN111696990A | 2020-09-22 | |||
| CN105453266A | 2016-03-30 | |||
| CN114373760A | 2022-04-19 | |||
| US20220271040A1 | 2022-08-25 | |||
| CN114373735A | 2022-04-19 | |||
| US20210242239A1 | 2021-08-05 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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