Title:
SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/196996
Kind Code:
A1
Abstract:
Disclosed are a semiconductor structure and a preparation method therefor. The semiconductor structure (100) comprises: a functional structure (11) and a first mark structure (121), which are located on a substrate (10), a feature size of the functional structure (11) being the same as a feature size of the first mark structure (121); and a first dielectric layer (20), which is located at the functional structure (11) and the first mark structure (121), the thickness of the first dielectric layer at the functional structure (11) being different from the thickness of the first dielectric layer at the first mark structure (121).
Inventors:
XIA YUNSHENG (CN)
HUANG JEN-CHOU (CN)
HUANG JEN-CHOU (CN)
Application Number:
PCT/CN2021/079803
Publication Date:
October 07, 2021
Filing Date:
March 09, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G03F7/20; G03F9/00; H01L23/544
Foreign References:
| US6180537B1 | 2001-01-30 | |||
| CN107564914A | 2018-01-09 | |||
| CN107658290A | 2018-02-02 |
Other References:
See also references of EP 4120021A4
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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