Title:
SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/201798
Kind Code:
A1
Abstract:
The present invention relates to a semiconductor structure and a preparation method therefor. The preparation method for the semiconductor structure comprises: providing a substrate; forming in the substrate a plurality of first trenches which are arranged in parallel at intervals and extend in a first direction, and initial active regions between adjacent first trenches, each initial active region comprising a first initial source/drain region close to the bottom of each first trench, a second initial source/drain region distant from the bottom of each first trench, and an initial channel region located between the first initial source/drain region and the second initial source/drain region; and forming a protective dielectric layer, the protective dielectric layer covering a side wall of each second initial source/drain end and a side wall of each initial channel region; thinning the first initial source/drain regions; and depositing conductive material layers on two opposite sides of each first initial source/drain region to form a bit line structure, the bit line structure extending in the first direction. According to the preparation method for the semiconductor structure, the bit line quality can be improved, the contact resistance between the bit line structure and each source/drain region is reduced, and RC delay is reduced.
Inventors:
SHAO GUANGSU (CN)
XIAO DEYUAN (CN)
QIU YUNSONG (CN)
LIU YOUMING (CN)
JIANG YI (CN)
SU XINGSONG (CN)
ZHU YUHAN (CN)
XIAO DEYUAN (CN)
QIU YUNSONG (CN)
LIU YOUMING (CN)
JIANG YI (CN)
SU XINGSONG (CN)
ZHU YUHAN (CN)
Application Number:
PCT/CN2022/092947
Publication Date:
October 26, 2023
Filing Date:
May 16, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/336; H01L29/08; H01L29/78
Foreign References:
| CN114156236A | 2022-03-08 | |||
| US20170323969A1 | 2017-11-09 | |||
| CN113611671A | 2021-11-05 | |||
| CN114141714A | 2022-03-04 | |||
| CN102082117A | 2011-06-01 | |||
| CN113241347A | 2021-08-10 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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