Title:
SEMICONDUCTOR STRUCTURE, RADIO FREQUENCY FRONT-END MODULE, POWER CONVERSION MODULE AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/046093
Kind Code:
A1
Abstract:
Embodiments of the present application relate to the technical field of semiconductors, and provide a semiconductor structure and a preparation method, a radio frequency front-end module, a power conversion module and an electronic device, for use in improving the electrostatic discharge (ESD) immunity of a wide-bandgap device in the semiconductor structure. The semiconductor structure may be a PA chip, an LNA chip, a power conversion chip, a chip capable of ESD protection, or the like. The semiconductor structure comprises a silicon substrate and an epitaxial layer disposed on the silicon substrate. The epitaxial layer is provided with an opening exposing the silicon substrate, the opening is formed by means of an etching process, and atoms on the contour surface defining the opening are arranged in an amorphous or polycrystalline state. An electrode is disposed on the epitaxial layer and forms a wide-bandgap device with the epitaxial layer. A silicon-based device is used as an ESD protection device, is located in the opening and extends into the silicon substrate.
Inventors:
HE LINFENG (CN)
WEI WEI (CN)
ZHANG YAWEN (CN)
WEI WEI (CN)
ZHANG YAWEN (CN)
Application Number:
PCT/CN2023/112597
Publication Date:
March 07, 2024
Filing Date:
August 11, 2023
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L27/02; H01L21/82
Foreign References:
| CN112786538A | 2021-05-11 | |||
| CN102403302A | 2012-04-04 | |||
| CN113782529A | 2021-12-10 | |||
| CN102194830A | 2011-09-21 | |||
| CN105529305A | 2016-04-27 | |||
| US20200295045A1 | 2020-09-17 | |||
| US20190006171A1 | 2019-01-03 | |||
| US20210111192A1 | 2021-04-15 |
Attorney, Agent or Firm:
BEIJING ZBSD PATENT & TRADEMARK AGENT LTD. (CN)
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