Title:
SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2022/205716
Kind Code:
A1
Abstract:
The present application relates to a semiconductor structure, comprising a first region, a second region, and a third region, the second region being located between the first region and the third region. Moreover, the semiconductor structure comprises: a substrate; a shallow trench isolation structure located in the substrate and isolating the substrate into a plurality of active regions, the active region of the first region being used for forming a semiconductor device; a dielectric layer located on the substrate; a through hole structure located in the third region and passing through the dielectric layer and the substrate; and a stress buffer structure located in the second region and comprising a first buffer doped region, the first buffer doped region being located in the active region and formed by doping a first buffer impurity in the active region, and the atomic radius of the first buffer impurity being smaller than the atomic radius of the substrate material.
Inventors:
WANG LUGUANG (CN)
Application Number:
PCT/CN2021/109541
Publication Date:
October 06, 2022
Filing Date:
July 30, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L23/528; H01L23/538
Foreign References:
| US20120292746A1 | 2012-11-22 | |||
| CN103367114A | 2013-10-23 | |||
| CN104835781A | 2015-08-12 | |||
| US20140284690A1 | 2014-09-25 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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