Title:
SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2022/252447
Kind Code:
A1
Abstract:
The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure, comprising a semiconductor substrate and a test element set. The test element set comprises: a first metal layer located on the semiconductor substrate, wherein a reserved space is formed on the first metal layer, and the reserved space penetrates through the first metal layer; a second metal layer located above the first metal layer and spaced apart from the first metal layer; and a through-silicon via located in the semiconductor substrate and penetrating through the reserved space, wherein the through-silicon via is connected to the second metal layer, and the cross-sectional area of the through-silicon via is smaller than that of the reserved space, so that the through-silicon via is spaced apart from the first metal layer.
Inventors:
LEE TZUNG-HAN (CN)
LIU CHIHCHENG (CN)
LIU CHIHCHENG (CN)
Application Number:
PCT/CN2021/120401
Publication Date:
December 08, 2022
Filing Date:
September 24, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L23/544
Foreign References:
CN104752406A | 2015-07-01 | |||
CN103137511A | 2013-06-05 | |||
CN103187400A | 2013-07-03 | |||
US20200294871A1 | 2020-09-17 | |||
CN101271873A | 2008-09-24 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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