Title:
SEMICONDUCTOR STRUCTURES AND METHODS FOR FORMING THE SAME
Document Type and Number:
WIPO Patent Application WO/2023/231745
Kind Code:
A1
Abstract:
A semiconductor structure and method for manufacturing thereof are provided. The semiconductor structure includes a vertical transistor. The vertical transistor includes a semiconductor body extending in a first direction. The semiconductor body includes a source/drain at one end of the semiconductor body. The vertical transistor also includes a gate structure coupled to at least one side of the semiconductor body. The gate structure includes a gate dielectric and a gate electrode. The vertical transistor further includes a silicide. At least part of the silicide is above the source/drain. An area of the silicide is larger than an area of a first surface of the source/drain. The first surface is vertical to the first direction.
Inventors:
ZHANG HAO (CN)
YAN BINGJIE (CN)
WANG YA (CN)
HUA WENYU (CN)
YAN BINGJIE (CN)
WANG YA (CN)
HUA WENYU (CN)
Application Number:
PCT/CN2023/093907
Publication Date:
December 07, 2023
Filing Date:
May 12, 2023
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L29/78; H01L21/336; H10B12/00
Foreign References:
| US20160013292A1 | 2016-01-14 | |||
| US20110115011A1 | 2011-05-19 | |||
| US20160013104A1 | 2016-01-14 | |||
| CN1251207A | 2000-04-19 | |||
| US20200350403A1 | 2020-11-05 | |||
| CN113056829A | 2021-06-29 | |||
| CN107464757A | 2017-12-12 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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