Title:
SEMICONDUCTOR SUBSTRATE, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2010/038461
Kind Code:
A1
Abstract:
Disclosed is a semiconductor substrate having a base substrate, an insulating layer and an Si crystal layer in this order, wherein an inhibition layer is formed on the Si crystal layer for the purpose of inhibiting crystal growth of a compound semiconductor, the inhibition layer has an opening penetrating therethrough to the Si crystal layer, a seed crystal is arranged within the opening, and the compound semiconductor is lattice-matched or quasi-lattice-matched to the seed crystal. Also disclosed is an electronic device comprising a substrate, an insulating layer formed on the substrate, an Si crystal layer formed on the insulating layer, an inhibition layer which is formed on the Si crystal layer for the purpose of inhibiting crystal growth of a compound semiconductor and has an opening penetrating therethrough to the Si crystal layer, a seed crystal arranged within the opening, a compound semiconductor lattice-matched or quasi-lattice-matched to the seed crystal, and a semiconductor device formed using the compound semiconductor.
Inventors:
HATA MASAHIKO (JP)
Application Number:
PCT/JP2009/005068
Publication Date:
April 08, 2010
Filing Date:
October 01, 2009
Export Citation:
Assignee:
SUMITOMO CHEMICAL CO (JP)
HATA MASAHIKO (JP)
HATA MASAHIKO (JP)
International Classes:
H01L21/20; H01L21/02; H01L21/205; H01L21/331; H01L21/338; H01L21/8222; H01L21/8248; H01L21/8249; H01L27/06; H01L27/08; H01L27/12; H01L29/737; H01L29/778; H01L29/786; H01L29/812
Domestic Patent References:
| WO2006125040A2 | 2006-11-23 |
Foreign References:
| JPH0484418A | 1992-03-17 | |||
| JP2000021771A | 2000-01-21 | |||
| JPH04162614A | 1992-06-08 | |||
| JPH04233720A | 1992-08-21 | |||
| JPS61135115A | 1986-06-23 | |||
| JPH01227424A | 1989-09-11 | |||
| JP2006513584A | 2006-04-20 |
Other References:
MCMAHON W.E. ET AL: "An STM and LEED study of MOCVD-prepared P/Ge (100) to (111) surfaces", SURFACE SCIENCE, vol. 571, no. 1-3, 1 November 2004 (2004-11-01), pages 146 - 156
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
Ryuka international patent business corporation (JP)
Ryuka international patent business corporation (JP)
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