Title:
SEMICONDUCTOR SUPER-JUNCTION POWER DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/103097
Kind Code:
A1
Abstract:
The embodiments of the present invention provide a semiconductor super-junction power device, comprising a super-junction MOSFET cell array consisting of multiple super-junction MOSFET cells. A gate structure of each super-junction MOSFET cell comprises a gate dielectric layer, a gate, and an n-type floating gate. The gate and the n-type floating gate are located on the gate dielectric layer, and in the transverse direction, the gate is located on the side close to an n-type source region and the n-type floating gate is located on the side close to an n-type drift region. The gate acts on the n-type floating gate by means of capacitive coupling. The n-type floating gate of at least one super-junction MOSFET cell is isolated from a p-type body region by means of the gate dielectric layer, and the n-type floating gate of at least one super-junction MOSFET cell contacts the p-type body region through an opening in the gate dielectric layer located below the n-type floating gate to form a p-n junction diode. According to the embodiments of the present invention, the reverse recover speed of the semiconductor super-junction power device can be adjusted conveniently.
Inventors:
GONG YI (CN)
LIU WEI (CN)
LIU LEI (CN)
YUAN YUANLIN (CN)
WANG RUI (CN)
LIU WEI (CN)
LIU LEI (CN)
YUAN YUANLIN (CN)
WANG RUI (CN)
Application Number:
PCT/CN2019/123424
Publication Date:
June 03, 2021
Filing Date:
December 05, 2019
Export Citation:
Assignee:
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/06; H01L27/02
Foreign References:
| CN106229343A | 2016-12-14 | |||
| JP2011142339A | 2011-07-21 | |||
| US20170213887A1 | 2017-07-27 | |||
| CN107768371A | 2018-03-06 | |||
| US20130334565A1 | 2013-12-19 |
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
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