Title:
SEMICONDUCTOR SUPERJUNCTION POWER DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/087685
Kind Code:
A1
Abstract:
Embodiments of the present application provide a semiconductor superjunction power device, comprising: an N-type drain region (20), an N-type drift region (21), and a plurality of P-type columns (22), wherein the width of each P-type column (22) among the plurality of P-type columns (22) is the same, and the spacing between two adjacent P-type columns (22) is the same, the top portions of the plurality of P-type columns (22) are respectively provided with a plurality of P-type body regions (23a; 23b; 23c) that are in one-to-one correspondence to the P-type columns (22), the plurality of P-type body regions (23a; 23b; 23c) have the same width, and each of the P-type body regions (23a; 23b; 23c) is internally provided with an N-type source region (24); a gate structure, which controls the opening and closing of current channels between the N-type source regions (24) and the N-type drift region (21); and a plurality of JFET regions (25a; 25b; 25c; 25d), which are located above the N-type drift region (21) and which are between adjacent P-type body regions (23a; 23b; 23c), the plurality of JFET regions (25a; 25b; 25c; 25d) being provided with at least two different widths.
Inventors:
LIU WEI (CN)
LIU LEI (CN)
YUAN YUANLIN (CN)
WANG RUI (CN)
LIU LEI (CN)
YUAN YUANLIN (CN)
WANG RUI (CN)
Application Number:
PCT/CN2022/098644
Publication Date:
May 25, 2023
Filing Date:
June 14, 2022
Export Citation:
Assignee:
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/06; H01L29/78
Foreign References:
| CN107408574B | 2021-03-30 | |||
| CN101013724A | 2007-08-08 | |||
| CN107464837A | 2017-12-12 | |||
| CN107516678A | 2017-12-26 | |||
| CN104009084A | 2014-08-27 | |||
| CN105428397A | 2016-03-23 | |||
| CN104952928A | 2015-09-30 |
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
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