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Title:
SEMICONDUCTOR THIN FILM FORMING METHOD, PRODUCTION METHODS FOR SEMICONDUCTOR DEVICE AND ELECTROOPTICAL DEVICE, DEVICES USED FOR THESE METHODS, AND SEMICONDUCTOR DEVICE AND ELECTROOPTICAL DEVICE
Document Type and Number:
WIPO Patent Application WO/2002/047137
Kind Code:
A1
Abstract:
A method of forming a large-area, high-crystallinity, high quality, polycrystalline or single-crystal semiconductor thin film such as polycrystalline silicon, and a device for implementing this method. A method of forming a polycrystalline (or single-crystal) semiconductor thin film, or a method of fabricating a semiconductor device wherein, when forming on a substrate (1) a high-crystallinity, large-grain-size polycrystalline (or single-crystal) semiconductor thin film (7) such as a polycrystalline silicon film, or when fabricating a semiconductor device having a polycrystalline (or single-crystal) semiconductor thin film (7) on a substrate (1), after a low crystalline semiconductor thin film (7A) is formed on the substrate (1), a flash lamp anneal is applied to the thin film (7A), and the crystallization of the thin film (7A) is promoted by fusing, or semi-fusing, or heating and cooling in a non-fused condition to obtain the polycrystalline (or single-crystal) semiconductor thin film; and devices for implementing these methods.

Inventors:
YAMANAKA HIDEO (JP)
Application Number:
PCT/JP2001/010733
Publication Date:
June 13, 2002
Filing Date:
December 07, 2001
Export Citation:
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Assignee:
SONY CORP (JP)
YAMANAKA HIDEO (JP)
International Classes:
C23C16/24; C23C16/56; C30B13/24; H01L21/20; H01L21/336; H01L29/786; (IPC1-7): H01L21/20; H01L29/786; H01L31/04; H01L21/26; H01L21/205; G02F1/1368; G09F9/30; H01J9/02; H01J1/304
Foreign References:
JPH05291294A1993-11-05
JPH05218367A1993-08-27
JPH0778759A1995-03-20
US5753542A1998-05-19
JP2000311857A2000-11-07
JPS5768014A1982-04-26
JPH07106247A1995-04-21
JPS6235512A1987-02-16
JPS57183020A1982-11-11
JPS63278217A1988-11-15
JPH02283036A1990-11-20
JPH07226374A1995-08-22
JPH07307286A1995-11-21
US6074901A2000-06-13
US6162667A2000-12-19
US5073698A1991-12-17
JPS60102728A1985-06-06
JPH0851076A1996-02-20
JPH08195494A1996-07-30
JPS63271922A1988-11-09
JPH02275622A1990-11-09
Attorney, Agent or Firm:
Nakamura, Tomoyuki c/o Miyoshi International Patent Office 9th Floor (Toranomon Daiichi Building 2-3 Toranomon 1-chome Minato-ku, Tokyo, JP)
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