Title:
SEMICONDUCTOR WAFER AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2021/079434
Kind Code:
A1
Abstract:
A method for producing a semiconductor wafer according to the present invention comprises: a first step wherein a gallium nitride growth layer, which is divided into a plurality of small sections, is formed on the upper surface of a silicon substrate; and a second step wherein the space among the plurality of small sections is filled with an insulating film. The insulating film applies a stress to the silicon substrate in a direction that is opposite to the direction in which the gallium nitride growth layer applies a stress to the silicon substrate.
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Inventors:
TAKETOMI YUKI (JP)
MIKI KOHEI (JP)
MIYAKUNI SHINICHI (JP)
MIKI KOHEI (JP)
MIYAKUNI SHINICHI (JP)
Application Number:
PCT/JP2019/041534
Publication Date:
April 29, 2021
Filing Date:
October 23, 2019
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/20; H01L21/205; H01L21/31
Domestic Patent References:
| WO2002043151A1 | 2002-05-30 |
Foreign References:
| JP2005228936A | 2005-08-25 | |||
| JP2011124335A | 2011-06-23 | |||
| JPH11243056A | 1999-09-07 | |||
| JP2005333154A | 2005-12-02 | |||
| JP2018520502A | 2018-07-26 | |||
| JP2007335484A | 2007-12-27 | |||
| JP2006128627A | 2006-05-18 | |||
| JP2015512151A | 2015-04-23 | |||
| JP2018026514A | 2018-02-15 | |||
| JP2011135058A | 2011-07-07 | |||
| JP2005093914A | 2005-04-07 |
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
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