Title:
SENSE AMPLIFIER AND CONTROL METHOD THEREFOR, MEMORY READ-WRITE CIRCUIT AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2021/051651
Kind Code:
A1
Abstract:
Disclosed are a sense amplifier and a control method therefor, a memory read-write circuit and a memory. The sense amplifier comprises two PMOS transistors, two NMOS transistors, a first input/output end and a second input/output end, wherein the two PMOS transistors are respectively a first PMOS transistor and a second PMOS transistor, and the two NMOS transistors are respectively a first NMOS transistor and a second NMOS transistor; and four switch units, wherein the first PMOS transistor and the first NMOS transistor are respectively connected to the first input/output end by means of a switch unit, the second PMOS transistor and the second NMOS transistor are respectively connected to the second input/output end by means of a switch unit, the switch units are used for configuring each PMOS transistor and each NMOS transistor to be in an amplification mode or a diode mode, a gate electrode of the first NMOS transistor is used for connecting to a bit line, and a gate electrode of the second NMOS transistor is used for connecting to a reference bit line. The performance of the sense amplifier is improved.
Inventors:
SHANG WEIBING (CN)
CAO KANYU (CN)
CAO KANYU (CN)
Application Number:
PCT/CN2019/121160
Publication Date:
March 25, 2021
Filing Date:
November 27, 2019
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C7/06
Foreign References:
| CN208796671U | 2019-04-26 | |||
| CN101149969A | 2008-03-26 | |||
| CN106409328A | 2017-02-15 | |||
| US20100165771A1 | 2010-07-01 |
Other References:
See also references of EP 4020473A4
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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