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Title:
SHEET FOR FORMING FIRST PROTECTIVE MEMBRANE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND USE OF SHEET
Document Type and Number:
WIPO Patent Application WO/2023/136053
Kind Code:
A1
Abstract:
This sheet for forming a first protective membrane on a surface having at least bumps of a semiconductor wafer comprises a first base material, a buffer layer, an intermediate peeling layer, and a first protective membrane-forming film, laminated in that order in the thickness direction thereof, said intermediate peeling layer containing an ethylene-vinyl acetate copolymer.

Inventors:
MORISHITA TOMOTAKA (JP)
SHINOMIYA KEISUKE (JP)
Application Number:
PCT/JP2022/046800
Publication Date:
July 20, 2023
Filing Date:
December 20, 2022
Export Citation:
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Assignee:
LINTEC CORP (JP)
International Classes:
H01L23/29; H01L21/301; H01L21/304; H01L21/56; H01L21/60; H01L21/683; H01L23/31
Domestic Patent References:
WO2020085220A12020-04-30
WO2018147097A12018-08-16
WO2018066302A12018-04-12
WO2017078052A12017-05-11
Foreign References:
JP2018174220A2018-11-08
JP2010074144A2010-04-02
JP2021163768A2021-10-11
Attorney, Agent or Firm:
NISHIZAWA Kazuyoshi et al. (JP)
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