Title:
SHIELDING COMPOUND, THIN FILM FORMATION METHOD USING SAME, AND SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURED THEREFROM
Document Type and Number:
WIPO Patent Application WO/2024/054065
Kind Code:
A1
Abstract:
The present invention relates to a shielding compound, a thin film formation method using same, and a semiconductor substrate and a semiconductor device manufactured therefrom, and provides, as a shielding compound, a compound having a predetermined structure, forms, on a substrate, a shielding area for a silicon-based thin film so as to reduce the deposition speed of a silicon-based thin film, suitably lowers thin film growth rate so as to greatly improve step coverage and thickness uniformity of a thin film even if the thin film is formed on a substrate having a complex structure, and reduces corrosion or deterioration and improves thin film crystallinity such that electrical properties of the thin film are enhanced.
Inventors:
YEON CHANG BONG (KR)
JUNG JAE SUN (KR)
JUNG JAE SUN (KR)
Application Number:
PCT/KR2023/013428
Publication Date:
March 14, 2024
Filing Date:
September 07, 2023
Export Citation:
Assignee:
SOULBRAIN CO LTD (KR)
International Classes:
H01L21/02; C23C16/04; C23C16/34; C23C16/455; H01L21/768; H10B43/30
Foreign References:
| KR102254394B1 | 2021-05-24 | |||
| KR20210036257A | 2021-04-02 | |||
| KR20180123436A | 2018-11-16 | |||
| KR20130105238A | 2013-09-25 |
Other References:
TAN, K. C. ET AL.: "Utilizing tertiary butyl iodide as an effective film quality enhancing agent for atomic layer deposition of HfO2 dielectric thin films", AIP ADVANCES, vol. 11, no. 7, 2021, pages 1 - 6, XP012257819, DOI: 10.1063/5.0055847
Attorney, Agent or Firm:
NEWKOREA PATENT & LAW FIRM (KR)
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