Title:
SiGe CRYSTAL AND METHOD FOR PRODUCING THE SAME
Document Type and Number:
WIPO Patent Application WO/2001/096238
Kind Code:
A1
Abstract:
An SiGe crystal having a high performance index as a thermoelectric element, having an excellent workability, and having a marked effect of no characteristic deterioration and no cracks while in use. The high performance index is stable because the dopant concentration is so controlled that the high performance index is achieved. The size of the crystal grain is 5 X 10?-5¿ mm?3¿ or more, and the electric resistivity is 1 X 10?-5¿ to 1 X 10?-4¿ $g(V)m. A method for producing such a crystal and a thermoelectric element comprising the same are also disclosed.
Inventors:
ABE TAKAO (JP)
YONENAGA ICHIRO (JP)
YONENAGA ICHIRO (JP)
Application Number:
PCT/JP2001/004482
Publication Date:
December 20, 2001
Filing Date:
May 29, 2001
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
ABE TAKAO (JP)
YONENAGA ICHIRO (JP)
ABE TAKAO (JP)
YONENAGA ICHIRO (JP)
International Classes:
C30B15/00; C30B29/52; H01L35/14; H01L35/34; C01B33/02; (IPC1-7): C01B33/06; C30B29/52; H01L35/14; H01L35/34
Foreign References:
| JPH06120568A | 1994-04-28 | |||
| JPH0856020A | 1996-02-27 | |||
| EP0185499A2 | 1986-06-25 | |||
| JPH04285096A | 1992-10-09 |
Attorney, Agent or Firm:
Ishihara, Shoji (Wakai Bldg. 7-8 Higashi-Ikebukuro 3-chome Toshima-ku, Tokyo, JP)
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