Title:
SIC SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/189057
Kind Code:
A1
Abstract:
A semiconductor device (1A) comprises: a chip (2) that comprises a SiC single crystal and has a major surface (3); a trench structure (20) that includes a first sidewall (22A) extending in an a-axis direction of the SiC single crystal and a second sidewall (22B) extending in an m-axis direction of the SiC single crystal, and that is formed on the major surface; and a first conductivity-type contact region (50) that is formed in a region inside the chip along the trench structure and spaced apart from the second sidewall in the a-axis direction.
Inventors:
NAGAYA KEISUKE (JP)
NAKANO YUKI (JP)
YAMAMOTO KENJI (JP)
MORI SEIGO (JP)
NAKANO YUKI (JP)
YAMAMOTO KENJI (JP)
MORI SEIGO (JP)
Application Number:
PCT/JP2023/006636
Publication Date:
October 05, 2023
Filing Date:
February 24, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/78; H01L29/06; H01L29/12; H01L29/739
Domestic Patent References:
| WO2020031971A1 | 2020-02-13 |
Foreign References:
| JP2020174165A | 2020-10-22 | |||
| JP2019087647A | 2019-06-06 | |||
| JP2016163047A | 2016-09-05 |
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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