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Patent Searching and Data


Title:
SILICEOUS FILM WITH SMALLER FLAT BAND SHIFT AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2006/016672
Kind Code:
A1
Abstract:
Disclosed are a method for producing a siliceous film having excellent insulating characteristics, and a coating composition used therefor. Specifically disclosed is a coating composition containing a perhydropolysilazane or modified perhydropolysilazane having a number average molecular weight of 100-50,000 and an aluminum compound having a molar ratio of aluminum atoms to silicon atoms of not less than 10 ppb and not more than 100 ppm. A siliceous film is produced by coating such a coating composition on a substrate and firing the coated substrate in an atmosphere containing water vapor, oxygen or a gas mixture of them.

Inventors:
SHIMIZU YASUO (JP)
ICHIYAMA MASAAKI (JP)
NAGURA TERUNO (JP)
Application Number:
PCT/JP2005/014819
Publication Date:
February 16, 2006
Filing Date:
August 12, 2005
Export Citation:
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Assignee:
AZ ELECTRONIC MATERIALS JAPAN (JP)
AZ ELECTRONIC MATERIALS USA (US)
SHIMIZU YASUO (JP)
ICHIYAMA MASAAKI (JP)
NAGURA TERUNO (JP)
International Classes:
C09D183/16; B32B9/00; B32B18/00; C01B33/12; H01B3/46; H01L21/316; H01L21/762; H01L29/78
Foreign References:
JPH11105185A1999-04-20
JPH11105187A1999-04-20
JP2001026415A2001-01-30
JP2002075982A2002-03-15
JPH07196986A1995-08-01
JPS63191832A1988-08-09
JPH01221466A1989-09-04
JPH06299118A1994-10-25
JPH06306329A1994-11-01
Other References:
See also references of EP 1785459A4
Attorney, Agent or Firm:
Yoshitake, Kenji (Room 323, Fuji Bldg.,, 2-3, Marunouchi 3-chome, Chiyoda-ku Tokyo, JP)
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