Title:
SILICIDE ALLOY FILM FOR SEMICONDUCTOR DEVICE ELECTRODE, AND PRODUCTION METHOD FOR SILICIDE ALLOY FILM
Document Type and Number:
WIPO Patent Application WO/2016/208704
Kind Code:
A1
Abstract:
The present invention relates to a silicide alloy film that is formed upon a substrate that includes Si, the silicide alloy film being characterized by comprising a metal M1 that has a work function of 4.6-5.7 eV, a metal M2 that has a work function of 2.5-4.0 eV, and Si and by having a work function of 4.3-4.9 eV. Pt, Pd, Mo, Ir, W, and Ru are favorable for use as the metal M1 and Hf, La, Er, Ho, Eu, Pr, and Sm are favorable for use as the metal M2. As a thin film, this silicide alloy film has excellent heat resistance and also has good electrical properties.
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Inventors:
OHMI SHUNICHIRO (JP)
MASAHIRO YASUSHI (JP)
MASAHIRO YASUSHI (JP)
Application Number:
PCT/JP2016/068768
Publication Date:
December 29, 2016
Filing Date:
June 24, 2016
Export Citation:
Assignee:
TOKYO INST TECH (JP)
TANAKA PRECIOUS METAL IND (JP)
TANAKA PRECIOUS METAL IND (JP)
International Classes:
H01L21/28; C22C30/00; C23C14/14; C23C14/34; C23C14/58; H01L21/336; H01L29/417; H01L29/78
Foreign References:
| JP2008060101A | 2008-03-13 | |||
| JPH0738104A | 1995-02-07 | |||
| JP2009277961A | 2009-11-26 | |||
| JP2007173412A | 2007-07-05 |
Attorney, Agent or Firm:
TANAKA AND OKAZAKI (JP)
Patent business corporation Tanaka and Okazaki and associates (JP)
Patent business corporation Tanaka and Okazaki and associates (JP)
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