Title:
SILICIDE ALLOY MATERIAL AND THERMOELECTRIC CONVERSION ELEMENT IN WHICH SAME IS USED
Document Type and Number:
WIPO Patent Application WO/2020/149304
Kind Code:
A1
Abstract:
Provided is a silicide alloy material with which it is possible to reduce environmental load and achieve a high thermoelectric performance. Provided is a silicide alloy material having silicon and ruthenium as main components, the silicide alloy material being such that the atomic ratio of elements constituting the alloy material satisfy 45 atm% ≤ Si/(Ru + Si) ≤ 70 atm%, and 30 atm% ≤ Ru/(Ru + Si) ≤ 55 atm%, where the silicon content and the ruthenium content are represented by Si and Ru, respectively.
More Like This:
Inventors:
KODA YOICHIRO (JP)
AKIIKE RYO (JP)
KURAMOCHI HIDETO (JP)
AKIIKE RYO (JP)
KURAMOCHI HIDETO (JP)
Application Number:
PCT/JP2020/001073
Publication Date:
July 23, 2020
Filing Date:
January 15, 2020
Export Citation:
Assignee:
TOSOH CORP (JP)
International Classes:
H01L35/14; B22F3/14; C04B35/58; C22C1/04; C22C5/04
Foreign References:
| US20170077375A1 | 2017-03-16 | |||
| JP2019218592A | 2019-12-26 | |||
| JP2002368291A | 2002-12-20 | |||
| JP2008147261A | 2008-06-26 | |||
| JP2019006659A | 2019-01-17 | |||
| JP2019041217A | 2019-03-14 | |||
| JP2019146704A | 2019-09-05 | |||
| JP2019227426A | 2019-12-17 |
Other References:
SIMKIN, B. A. ET AL.: "Directional thermoelectric properties of Ru2Si3", INTERMETALLICS, vol. 13, 2005, pages 1225 - 1232, XP004967242, DOI: 10.1016/j.intermet.2005.04.006
IVANENKO L. ET AL.: "Transport properties of Mn-doped Ru2Si3", MICROELECTRONIC ENGINEERING, vol. 70, 2003, pages 209 - 214, XP004467925, DOI: 10.1016/S0167-9317(03)00424-6
HOHL, H. ET AL.: "Transport properties of RuSi, RuGe, OsSi, and quasi-binary alloys of these compounds", JOURNAL OF ALLOYS AND COMPOUNDS, vol. 278, 1998, XP004182174, DOI: 10.1016/S0925-8388(98)00584-2
L. IVANENKO ET AL., 22ND INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 2003, pages 157 - 160
L. IVANENKO ET AL., MICROELECTRONIC ENGINEERING, vol. 70, 2003, pages 209 - 214
B. BUSCHINGER ET AL., JOURNAL OF ALLOYS AND COMPOUNDS, vol. 256, 1997, pages 57 - 60
H. HOLE ET AL., JOURNAL OF ALLOYS AND COMPOUNDS, vol. 278, 1998, pages 39 - 43
IVANENKO L. ET AL.: "Transport properties of Mn-doped Ru2Si3", MICROELECTRONIC ENGINEERING, vol. 70, 2003, pages 209 - 214, XP004467925, DOI: 10.1016/S0167-9317(03)00424-6
HOHL, H. ET AL.: "Transport properties of RuSi, RuGe, OsSi, and quasi-binary alloys of these compounds", JOURNAL OF ALLOYS AND COMPOUNDS, vol. 278, 1998, XP004182174, DOI: 10.1016/S0925-8388(98)00584-2
L. IVANENKO ET AL., 22ND INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 2003, pages 157 - 160
L. IVANENKO ET AL., MICROELECTRONIC ENGINEERING, vol. 70, 2003, pages 209 - 214
B. BUSCHINGER ET AL., JOURNAL OF ALLOYS AND COMPOUNDS, vol. 256, 1997, pages 57 - 60
H. HOLE ET AL., JOURNAL OF ALLOYS AND COMPOUNDS, vol. 278, 1998, pages 39 - 43
Download PDF: