Title:
SILICON BULK THERMOELECTRIC CONVERSION MATERIAL
Document Type and Number:
WIPO Patent Application WO/2019/131795
Kind Code:
A1
Abstract:
Provided is a silicon bulk thermoelectric conversion material for which thermoelectric performance is improved over the prior art by reducing the thermal conductivity of silicon. In the silicon bulk thermoelectric conversion material, the ZT exceeds 0.2 at room temperature with silicon alone. The silicon bulk thermoelectric conversion material has a plurality of silicon grains measuring 1-300 nm, first voids measuring 1-30 nm on average that are present in the plurality of silicon grains and on the surfaces of the silicon grains, and second voids measuring 100-300 nm on average that are present between the plurality of silicon grains. The silicon grains have an aspect ratio of less than 10.
Inventors:
SHIOMI JUNICHIRO (JP)
KASHIWAGI MAKOTO (JP)
KODAMA TAKASHI (JP)
KASHIWAGI MAKOTO (JP)
KODAMA TAKASHI (JP)
Application Number:
PCT/JP2018/047940
Publication Date:
July 04, 2019
Filing Date:
December 26, 2018
Export Citation:
Assignee:
JAPAN SCIENCE & TECH AGENCY (JP)
International Classes:
H01L35/14; B22F1/054; B82Y30/00; C01B33/02; H01L35/26
Domestic Patent References:
| WO2017057237A1 | 2017-04-06 |
Foreign References:
| JP2000261044A | 2000-09-22 |
Other References:
OHNISHI, MASATO: "Phonon engineering for thermoelectric materials using interface of nanostructuring", CERAMICS, vol. 52, no. 2, 1 February 2017 (2017-02-01), pages 75 - 77
Attorney, Agent or Firm:
TAKAHASHI, HAYASHI AND PARTNER PATENT ATTORNEYS, INC. (JP)
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