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Title:
SILICON CARBIDE COMPOSITE SUBSTRATE, AND MANUFACTURING METHOD THEREFOR AND USE THEREOF
Document Type and Number:
WIPO Patent Application WO/2023/221570
Kind Code:
A1
Abstract:
A silicon carbide composite substrate, and a manufacturing method therefor and the use thereof. The silicon carbide composite substrate comprises a single crystal layer, a middle layer and a polycrystalline supporting layer, which are arranged in a stacked mode, wherein the middle layer comprises a first impurity, a second impurity and a third impurity, and the polycrystalline supporting layer comprises the first impurity and the second impurity. The middle layer and the polycrystalline supporting layer are both provided with the first impurity and the second impurity, such that the resistivity between the single crystal layer and the polycrystalline supporting layer is reduced. By means of the introduced first and second impurities, the thermal expansion coefficient of the polycrystalline supporting layer can be adjusted according to requirements, such that the thermal expansion coefficient of the polycrystalline supporting layer is comparable to that of the single crystal layer on the basis that the resistivity requirement of the polycrystalline supporting layer is satisfied, and the thermal mismatch caused by an excessively large difference in the thermal expansion coefficients is in turn avoided.

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Inventors:
GUO CHAO (CN)
MU FENGWEN (CN)
Application Number:
PCT/CN2023/075241
Publication Date:
November 23, 2023
Filing Date:
February 09, 2023
Export Citation:
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Assignee:
INNOVATIVE SEMICONDUCTOR SUBSTRATE TECH CO LTD (CN)
International Classes:
C30B29/36; C30B33/06
Foreign References:
CN114864529A2022-08-05
CN109478495A2019-03-15
CN106489187A2017-03-08
CN101932757A2010-12-29
CN112725893A2021-04-30
CN107004573A2017-08-01
CN113690298A2021-11-23
CN108140540A2018-06-08
CN107108218A2017-08-29
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
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