Title:
SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/094764
Kind Code:
A1
Abstract:
A silicon carbide epitaxial substrate (51) has a silicon carbide monocrystalline substrate (10) of one conductivity type, a first silicon carbide layer (21) of the one conductivity type, a second silicon carbide layer (22) of the one conductivity type, and a third silicon carbide layer (23) of the one conductivity type. The silicon carbide monocrystalline substrate (10) has a first impurity concentration. The first silicon carbide layer (21) is provided on the silicon carbide monocrystalline substrate (10), and has a second impurity concentration lower than the first impurity concentration. The second silicon carbide layer (22) is provided on the first silicon carbide layer (21), and has a third impurity concentration higher than the first impurity concentration. The third silicon carbide layer (23) is provided on the second silicon carbide layer (22), and has a fourth impurity concentration lower than the second impurity concentration.
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Inventors:
NAKAMURA YU (JP)
KONISHI KAZUYA (JP)
KONISHI KAZUYA (JP)
Application Number:
PCT/JP2016/085525
Publication Date:
June 08, 2017
Filing Date:
November 30, 2016
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/861; C30B25/20; C30B29/36; H01L21/20; H01L21/205; H01L21/329; H01L21/336; H01L29/12; H01L29/78; H01L29/868
Domestic Patent References:
| WO2012026234A1 | 2012-03-01 | |||
| WO2015170500A1 | 2015-11-12 | |||
| WO2016092887A1 | 2016-06-16 |
Foreign References:
| JP2000319099A | 2000-11-21 | |||
| JP2011114252A | 2011-06-09 | |||
| JP2009064970A | 2009-03-26 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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