Title:
SILICON CARBIDE EPITAXIAL WAFER AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/066682
Kind Code:
A1
Abstract:
The present application relates to the technical field of silicon carbide epitaxial wafers, and discloses a silicon carbide epitaxial wafer and a preparation method therefor. The preparation method comprises the following steps: S1. providing a silicon carbide substrate, and under conditions required for epitaxial growth, sequentially performing buffer layer growth and epitaxial layer growth on the silicon carbide substrate, and obtaining a first product; and S2. sequentially soaking the first product in a first solution, a second solution and a third solution for cleaning, then cleaning with a fourth solution, and obtaining a silicon carbide epitaxial wafer.
Inventors:
GUO YUZE (CN)
OU CANLIN (CN)
ZHOU WEI (CN)
OU CANLIN (CN)
ZHOU WEI (CN)
Application Number:
PCT/CN2023/107985
Publication Date:
April 04, 2024
Filing Date:
July 18, 2023
Export Citation:
Assignee:
BYD CO LTD (CN)
BYD AUTO INDUSTRY COMPANY LTD (CN)
BYD AUTO INDUSTRY COMPANY LTD (CN)
International Classes:
H01L21/02
Foreign References:
| CN107492482A | 2017-12-19 | |||
| CN114334609A | 2022-04-12 | |||
| JP2015160750A | 2015-09-07 |
Attorney, Agent or Firm:
ZHIFAN & PARTNERS (CN)
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