Title:
SILICON CARBIDE SCHOTTKY CLAMPED TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/077563
Kind Code:
A1
Abstract:
The present invention relates to the field of semiconductor devices, and discloses a silicon carbide Schottky clamped transistor, comprising: an N+ type substrate collector region (1); an N type collector region (2) and a P type base region (3) which are located in the N+ type substrate collector region; an N+ type emitter region (4) located in the P type base region, a P+ type base region contact region (5) being provided in the N+ type emitter region (4); and an oxidation isolation layer (6), the oxidation isolation layer (6) being located at a side wall of the N+ type emitter area (4), and side walls of the P type base region (3) and the N type collector region (2). The present invention further provides a manufacturing method for the Schottky clamped transistor, which utilizes the characteristics that the oxidation rates of different crystal planes of silicon carbide are different, and the metal Ni forms different contact phenomena with N type silicon carbide and P type silicon carbide, greatly reducing the difficulty and cost of a device manufacturing process.
Inventors:
WEN ZHENGXIN (CN)
YE HUAIYU (CN)
ZHANG XINHE (CN)
CHEN SHISHI (CN)
ZHANG GUOQI (CN)
YE HUAIYU (CN)
ZHANG XINHE (CN)
CHEN SHISHI (CN)
ZHANG GUOQI (CN)
Application Number:
PCT/CN2019/123832
Publication Date:
April 29, 2021
Filing Date:
December 06, 2019
Export Citation:
Assignee:
SHENZHEN INST OF WIDE BANDGAP SEMICONDUCTORS (CN)
International Classes:
H01L29/73; H01L21/331
Foreign References:
| CN105957886A | 2016-09-21 | |||
| CN103681815A | 2014-03-26 | |||
| CN1949534A | 2007-04-18 | |||
| EP0490236A2 | 1992-06-17 |
Attorney, Agent or Firm:
BEIJING ZZFY INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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