SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2016/114057

A1

The front-surface side of a silicon carbide semiconductor substrate is provided with a MOS gate structure comprising a p- well layer (4), an n+ source region (6), a gate insulating film (8), and a gate electrode (9). An inter-layer insulating film (10) is provided so as to cover the gate electrode (9), and contacts the gate-insulating film (8). A titanium film (16) covers the inter-layer insulating film (10) with a titanium nitride film (11) interposed therebetween. A source electrode (14) is provided on the surface of the titanium film (16) so as not to contact the inter-layer insulating film (10). The source electrode (14) is electrically connected to the p- well layer (4) and the n+ source region (6) with the titanium film (16) and a front-surface silicide layer (12) interposed therebetween. The titanium film (16) exhibits the function of storing and shielding hydrogen atoms and hydrogen ions produced from inside the source electrode (14) during a high-temperature operation. As a result, it is possible to stably obtain prescribed electrical properties and improve reliability.

KUMAGAI NAOKI (JP)
TSUTSUMI TAKASHI (JP)
SAKAI YOSHIYUKI (JP)
OONISHI YASUHIKO (JP)
FUJIMOTO TAKUMI (JP)
FUKUDA KENJI (JP)
HARADA SHINSUKE (JP)
OKAMOTO MITSUO (JP)

PCT/JP2015/085166

July 21, 2016

December 16, 2015

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FUJI ELECTRIC CO LTD (JP)
NAT INST OF ADVANCED IND SCIEN (JP)

H01L29/78; H01L21/28; H01L29/12; H01L29/739

JP2014187128A	2014-10-02
JP2012129503A	2012-07-05
JP2006073792A	2006-03-16

SAKAI, AKINORI (JP)
Akinori Sakai (JP)

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