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Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/168240
Kind Code:
A1
Abstract:
A silicon carbide semiconductor device according to the present disclosure is provided with: a drift layer (20) of a first conductivity type, the drift layer having an active region and a termination region; a body region (30) of a second conductivity type on the drift layer; a source region (40) of the first conductivity type, the source region being provided on the body region within the active region; a gate trench (81) which penetrates through the body region and the source region; a gate electrode (60) which is formed within the gate trench, with a gate insulating film (50) being interposed therebetween; a Schottky trench (82) which is formed so as to penetrate through the body region within the active region; a plurality of JBS trenches (83) which are formed so as to penetrate through the body region within the termination region, while being parallel to each other; and a source electrode (70) which is connected to the source region, while forming a Schottky junction with the drift layer within the Schottky trench and the JBS trenches. The silicon carbide semiconductor device according to the present disclosure enables the achievement of a highly reliable silicon carbide semiconductor device.

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Inventors:
FUKUI YUTAKA (JP)
HATTA HIDEYUKI (JP)
TANAKA RINA (JP)
YOSHIDA MOTORU (JP)
Application Number:
PCT/JP2021/004142
Publication Date:
August 11, 2022
Filing Date:
February 04, 2021
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/06; H01L29/78; H01L29/12; H01L29/861; H01L29/868; H01L29/872
Domestic Patent References:
WO2015060441A12015-04-30
WO2017169086A12017-10-05
Foreign References:
JP2019216223A2019-12-19
JP2014157888A2014-08-28
Attorney, Agent or Firm:
MURAKAMI, Kanako et al. (JP)
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