Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/008529
Kind Code:
A1
Abstract:
The widths of p-type guard rings (21) are set in accordance with the intervals between adjacent p-type guard rings (21), and the widths increase as the intervals between the p-type guard rings (21) become larger. Furthermore, the width of frame-like parts (32) is set so as to be essentially equal to the width of p-type deep layers (5), and the interval between the frame-like parts (32) is set so as to be equal to the interval between the p-type deep layers (5). Accordingly, the differences between the formation areas of trenches (5a, 21a, 30a) per unit area in a cell section, a connecting section, and a guard ring section, can be reduced. Therefore, when a p-type layer (50) is formed, the differences between the amounts of the p-type layer (50) entering the trenches (5a, 21a, 30a) per unit area can also be reduced, and the thickness of the p-type layer (50) can be made uniform.
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Inventors:
TAKEUCHI YUICHI (JP)
MITANI SHUHEI (JP)
SUZUKI KATSUMI (JP)
YAMASHITA YUSUKE (JP)
MITANI SHUHEI (JP)
SUZUKI KATSUMI (JP)
YAMASHITA YUSUKE (JP)
Application Number:
PCT/JP2017/023990
Publication Date:
January 11, 2018
Filing Date:
June 29, 2017
Export Citation:
Assignee:
DENSO CORP (JP)
TOYOTA MOTOR CO LTD (JP)
TOYOTA MOTOR CO LTD (JP)
International Classes:
H01L29/06; H01L29/12; H01L29/47; H01L29/78; H01L29/861; H01L29/868; H01L29/872
Domestic Patent References:
| WO2013021636A1 | 2013-02-14 | |||
| WO2013187019A1 | 2013-12-19 |
Foreign References:
| JP2008010506A | 2008-01-17 | |||
| JP2012204506A | 2012-10-22 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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