Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/021721
Kind Code:
A1
Abstract:
First, second, fourth and fifth impurity regions (11, 12, 21, 22) have a first conductivity type, while a third impurity region (13) has a second conductivity type. The first to third impurity regions (11-13) reach a first layer (34) of the first conductivity type. The fourth and fifth impurity regions (21, 22) are provided on a second layer (35). First to fifth electrodes (S1, D1, G1, S2, D2) are respectively provided on the first to fifth impurity regions (11-13, 21, 22). The first and fifth electrodes (S1, D2) are electrically connected with each other, and the third and fourth electrodes (G1, S2) are electrically connected with each other. A sixth electrode (G2) is provided on a gate insulating film (I2) that covers the portion between the fourth and fifth impurity regions (21, 22).
Inventors:
HAYASHI HIDEKI (JP)
Application Number:
PCT/JP2012/064988
Publication Date:
February 14, 2013
Filing Date:
June 12, 2012
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
HAYASHI HIDEKI (JP)
HAYASHI HIDEKI (JP)
International Classes:
H01L21/8234; H01L21/8232; H01L27/06; H01L27/088; H01L27/095
Foreign References:
| JP2010103229A | 2010-05-06 | |||
| JP2009212458A | 2009-09-17 | |||
| JPS56165350A | 1981-12-18 | |||
| JP2011512042A | 2011-04-14 | |||
| JPH10107214A | 1998-04-24 | |||
| JP2004247496A | 2004-09-02 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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Claims: