SILICON CARBIDE SEMICONDUCTOR DEVICE - SUMITOMO ELECTRIC INDUSTRIES

Title:

SILICON CARBIDE SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2016/027584

Kind Code:

A1

Abstract:

This silicon carbide semiconductor device is provided with a silicon carbide semiconductor layer (100) and an electrode layer (101) that establishes an ohmic contact with the silicon carbide semiconductor layer (100). With respect to the electrode layer (101), the value of CI/CA, which is obtained by dividing the atomic concentration of carbon CI in the interface (IF) between the silicon carbide semiconductor layer (100) and the electrode layer (101) by the average atomic concentration of carbon CA within the electrode layer (101), satisfies 1.0 ≤ CI/CA ≤ 3.0.

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Inventors:

YAMAMOTO HIROFUMI (JP)
TAMASO HIDETO (JP)
KITABAYASHI HIROYUKI (JP)
WADA KEIJI (JP)
MATSUKAWA SHINJI (JP)

Application Number:

PCT/JP2015/069723

Publication Date:

February 25, 2016

Filing Date:

July 09, 2015

Export Citation:

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Assignee:

SUMITOMO ELECTRIC INDUSTRIES (JP)

International Classes:

H01L21/28; H01L21/336; H01L29/12; H01L29/739; H01L29/78

Foreign References:

JP2012099598A	2012-05-24
JP2010103229A	2010-05-06
JP2012099599A	2012-05-24
JP2012248873A	2012-12-13

Attorney, Agent or Firm:

Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)

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