Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/167147
Kind Code:
A1
Abstract:
This silicon carbide semiconductor device comprises: an n-type drift region; a p-type body region; an n-type source region; a p-type contact region; a gate trench that extends in a first direction; a gate insulating film; a gate electrode; a source electrode; an inter-layer insulating film; a p-type field relief region; and a p-type connection region that connects the contact region and the field relief region. The field relief region includes a first region that has a first dimension in a second direction perpendicular to the first direction, and a second region that is connected to the first region in the first direction and has a second dimension less than the first dimension in the second direction. The contact region includes a third region that is exposed from a contact hole provided in the inter-layer insulating film, and to which the source electrode is connected. In a plan view, the gate trench and the field relief region overlap an imaginary line extending in the first direction. The connection region adjoins the field relief region on the virtual straight line. The first region and the third region are aligned in the second direction.
Inventors:
SAITOH YU (JP)
Application Number:
PCT/JP2023/007114
Publication Date:
September 07, 2023
Filing Date:
February 27, 2023
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L29/78; H01L29/12
Domestic Patent References:
| WO2021124800A1 | 2021-06-24 | |||
| WO2018088063A1 | 2018-05-17 |
Foreign References:
| JP2019087647A | 2019-06-06 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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