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Title:
SILICON CARBIDE SUBSTRATE, METHOD FOR PRODUCING SAME, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/084561
Kind Code:
A1
Abstract:
A silicon carbide substrate which is formed of silicon carbide and has a main surface wherein the total length of linear etch pits observed therein is not longer than the diameter of the silicon carbide substrate if the main surface is etched by a chlorine gas.

Inventors:
HONKE TSUBASA (JP)
OKITA KYOKO (JP)
Application Number:
PCT/JP2015/081027
Publication Date:
June 02, 2016
Filing Date:
November 04, 2015
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
B24B37/00; C30B29/36; C09K3/14; C30B33/12; H01L21/205; H01L21/304
Foreign References:
JP2013247329A2013-12-09
JP2009238891A2009-10-15
JP2012248569A2012-12-13
JP2008068390A2008-03-27
JP2012004270A2012-01-05
JP2011513991A2011-04-28
JP2009091222A2009-04-30
JP2002226300A2002-08-14
Attorney, Agent or Firm:
NAKATA, Motomi et al. (JP)
Nakada Motoki (JP)
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