Title:
SILICON CARBIDE SUBSTRATE, METHOD FOR PRODUCING SILICON CARBIDE SUBSTRATE, METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL, EPITAXIAL SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/048157
Kind Code:
A1
Abstract:
A silicon carbide substrate according to the present invention has a main surface. The main surface is composed of an outer peripheral part which is a portion within 5 mm from the outer peripheral edge of the main surface, and a central part which is surrounded by the outer peripheral part. The central part is composed of a central region which has a diameter that is equal to a half of the maximum diameter of the main surface, and which is centered on the center of the main surface, and an outer peripheral region which surrounds the central region. The average nitrogen concentration in the central region is higher than the average nitrogen concentration in the outer peripheral region. The average nitrogen concentration in the central region is 1 × 1016 cm-3 or less. The electrical resistance at any given position in the central part is 1 × 106 Ωcm or more. The (0001) misorientation between any given two points, which are 1 cm away from each other, in the central part is 35 seconds or less.
Inventors:
SASAKI SHO (JP)
Application Number:
PCT/JP2023/027730
Publication Date:
March 07, 2024
Filing Date:
July 28, 2023
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/36; C30B23/06; H01L21/20
Foreign References:
| JP2015013761A | 2015-01-22 | |||
| JP2018140903A | 2018-09-13 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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