Title:
SILICON CARBIDE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2023/008054
Kind Code:
A1
Abstract:
According to the present invention, a silicon carbide substrate contains a dopant. This silicon carbide substrate has a portion, which has a lower resistivity than the center of this silicon carbide substrate in a plan view, on the off downstream side of the center of this silicon carbide substrate in the plan view. The value obtained by dividing the difference between the resistivity of this silicon carbide substrate in the center of this silicon carbide substrate in a plan view and the minimum value of the resistivity of this silicon carbide substrate on the off downstream side of the center of this silicon carbide substrate in the plan view by the resistivity of this silicon carbide substrate in the center of this silicon carbide substrate in the plan view is 0.015 or less. The resistivity of this silicon carbide substrate increases from the position, at which the resistivity of this silicon carbide substrate is minimum, toward the off downstream side.
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Inventors:
TAKAOKA HIROKI (JP)
UETA SHUNSAKU (JP)
UETA SHUNSAKU (JP)
Application Number:
PCT/JP2022/025747
Publication Date:
February 02, 2023
Filing Date:
June 28, 2022
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/36; C30B23/00
Foreign References:
| JP2019021694A | 2019-02-07 | |||
| JP2017055086A | 2017-03-16 | |||
| JP2017095319A | 2017-06-01 | |||
| CN103614779A | 2014-03-05 | |||
| JP2017065955A | 2017-04-06 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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