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Patent Searching and Data


Title:
SILICON-CONTAINING POLYPHENYL MONOMOLECULAR RESIN AND PHOTORESIST COMPOSITION THEREOF
Document Type and Number:
WIPO Patent Application WO/2020/259126
Kind Code:
A1
Abstract:
The present invention relates to a monomolecular resin of general formula (I) or general formula (II), wherein in formula (I), R0 and Ra1-Ra12 are the same or different, and are each independently selected from a hydrogen atom, hydroxyl, C1-15 alkoxy, or -ORb; in formula (II), R0 and Rb1-Rb18 are the same or different, and are each independently selected from a hydrogen atom, hydroxyl, C1-15 alkoxy, or -ORb; the Rb is a group having acid sensitivity; and Rx, Ry, and Rz are the same or different, and are each independently selected from the following unsubstituted or optionally substituted groups: C1-15 alkyl, C3-20 cycloalkyl, C6-20 aryl, 5-20 membered heteroaryl, 3-20 membered heterocyclyl, -C1-15 alkyl-C6-20 aryl, and -C1-15 alkyl-5-20 membered heteroaryl. The monomolecular resin of the present invention has good solubility, is suitable for manufacturing thin films, and has a high glass transition temperature, thereby satisfying requirements of a photolithography process. The present invention also relates to a photoresist composition comprising the monomolecular resin and use thereof.

Inventors:
CHEN JINPING (CN)
LI YI (CN)
ZHANG WEIJIE (CN)
YU TIANJUN (CN)
ZENG YI (CN)
Application Number:
PCT/CN2020/090908
Publication Date:
December 30, 2020
Filing Date:
May 18, 2020
Export Citation:
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Assignee:
THE TECHNICAL INST OF PHYSICS AND CHEMISTRY CHINESE ACADEMY OF SCIENCES (CN)
International Classes:
G03F7/004; C07F7/08; G03F7/038; G03F7/039; G03F7/075
Foreign References:
JP2007220721A2007-08-30
JP2007220721A2007-08-30
US20080044757A12008-02-21
US20080044757A12008-02-21
CN103304385A2013-09-18
CN108314785A2018-07-24
US20100301344A12010-12-02
CN102557930A2012-07-11
CN107266319A2017-10-20
Attorney, Agent or Firm:
BEIJING ORIGINTELLIGENCE IP LAW FIRM (CN)
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