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Title:
SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION WHICH CONTAINS CYCLIC ORGANIC GROUP HAVING HETEROATOM
Document Type and Number:
WIPO Patent Application WO/2014/046055
Kind Code:
A1
Abstract:
[Problem] To provide a resist underlayer film-forming composition for lithography. [Solution] A resist underlayer film-forming composition for lithography, which contains, as a silane, at least one substance selected from among hydrolyzable organosilanes, hydrolysis products thereof and hydrolysis-condensation products thereof, said silane containing a silane which has a cyclic organic group that contains, as ring-constituting atoms, a carbon atom, a nitrogen atom and a heteroatom other than the carbon atom and the nitrogen atom. The hydrolyzable organosilanes are represented by formula (1). (In formula (1), at least one group among R1, R2 and R3 represents a group to which an -Si(X)3 group is bonded through an alkylene group having 1-10 carbon atoms, and each of the remainder represents a hydrogen atom, an alkyl group having 1-10 carbon atoms or an aryl group having 6-40 carbon atoms; ring A represents a five- to ten-membered cyclic organic group which contains, as ring-constituting atoms, a carbon atom and at least one nitrogen atom, while additionally containing a sulfur atom or an oxygen atom; and X represents an alkoxy group, an acyloxy group or a halogen atom.)

Inventors:
KANNO YUTA (JP)
NAKAJIMA MAKOTO (JP)
TAKASE KENJI (JP)
TAKEDA SATOSHI (JP)
WAKAYAMA HIROYUKI (JP)
Application Number:
PCT/JP2013/074881
Publication Date:
March 27, 2014
Filing Date:
September 13, 2013
Export Citation:
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Assignee:
NISSAN CHEMICAL IND LTD (JP)
International Classes:
G03F7/11; C08G77/26; C08G77/28; H01L21/027
Domestic Patent References:
WO2010021290A12010-02-25
Foreign References:
JP2007231198A2007-09-13
JPH0356177A1991-03-11
CN102584884A2012-07-18
JPS4953629A1974-05-24
Attorney, Agent or Firm:
HANABUSA, Tsuneo et al. (JP)
Sepal Tsuneo (JP)
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