Title:
SILICON ETCHANT AND METHOD FOR PRODUCING TRANSISTOR BY USING SAME
Document Type and Number:
WIPO Patent Application WO/2012/029450
Kind Code:
A1
Abstract:
The present invention provides: an etchant that selectively etches a silicon-made dummy gate and that is used for etching the silicon-made dummy gate in a method for removing the silicon-made dummy gate and replacing same with an aluminum metal gate to thereby produce a transistor that includes a laminate comprising at least a high dielectric material film and the aluminum metal gate; and a method for producing a transistor by using said etchant. Disclosed is a silicon etchant that is used for etching the silicon-made dummy gate and that contains: 0.1-40% by weight of at least one type of alkali compound selected from ammonia, diamines, and polyamines represented by general formula (1); 5-50% by weight of at least one type of polyol selected from polyols represented by general formula (2); and 40-94.9% by weight of water. Also disclosed is a method for producing a transistor by using the silicon etchant.
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Inventors:
SHIMADA KENJI (JP)
MATSUNAGA HIROSHI (JP)
MATSUNAGA HIROSHI (JP)
Application Number:
PCT/JP2011/066997
Publication Date:
March 08, 2012
Filing Date:
July 26, 2011
Export Citation:
Assignee:
MITSUBISHI GAS CHEMICAL CO (JP)
SHIMADA KENJI (JP)
MATSUNAGA HIROSHI (JP)
SHIMADA KENJI (JP)
MATSUNAGA HIROSHI (JP)
International Classes:
H01L21/308; H01L21/28; H01L21/306; H01L21/336; H01L29/423; H01L29/49; H01L29/78
Foreign References:
JP2009152342A | 2009-07-09 | |||
JP2007214456A | 2007-08-23 | |||
JP2002359369A | 2002-12-13 | |||
US7316949B2 | 2008-01-08 | |||
JPH04370932A | 1992-12-24 | |||
JP2007214456A | 2007-08-23 | |||
JPH0448633A | 1992-02-18 | |||
JP2005229053A | 2005-08-25 | |||
JP2006008932A | 2006-01-12 |
Other References:
APPLIED PHYSICS, vol. 76, no. 9, 2007, pages 1006
COMPLETE COLLECTION OF MICRO-MACHINE/MEMS TECHNOLOGIES, 2003, pages 111
See also references of EP 2613345A4
COMPLETE COLLECTION OF MICRO-MACHINE/MEMS TECHNOLOGIES, 2003, pages 111
See also references of EP 2613345A4
Attorney, Agent or Firm:
OHTANI, Tamotsu et al. (JP)
Tamotsu Otani (JP)
Tamotsu Otani (JP)
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