Title:
SILICON-ETCHING LIQUID, METHOD FOR TREATING SUBSTRATE, AND METHOD FOR PRODUCING SILICON DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/048498
Kind Code:
A1
Abstract:
[Problem] To provide a silicon-etching liquid capable of wet-etching silicon at a high rate without etching an insulation film made of silicon dioxide, silicon nitride, or the like, when producing a semiconductor device or the like. [Solution] A silicon-etching liquid according to the present invention is characterized by comprising an organic alkali compound, orthoperiodate ions or a predetermined concentration of peroxydisulfate ions, and water, and is characterized by having a pH of 12.5 or higher at 24°C.
Inventors:
SEIKE YOSHIKI (JP)
NORO KOHSUKE (JP)
OKIMURA KOHSHIRO (JP)
HITOMI TATSUYA (JP)
NORO KOHSUKE (JP)
OKIMURA KOHSHIRO (JP)
HITOMI TATSUYA (JP)
Application Number:
PCT/JP2023/030896
Publication Date:
March 07, 2024
Filing Date:
August 28, 2023
Export Citation:
Assignee:
TOKUYAMA CORP (JP)
International Classes:
H01L21/308; H01L21/306
Domestic Patent References:
| WO2017126554A1 | 2017-07-27 | |||
| WO2007105281A1 | 2007-09-20 |
Foreign References:
| JP2019054121A | 2019-04-04 |
Attorney, Agent or Firm:
MAEDA & SUZUKI (JP)
Download PDF: