Title:
SILICON ON III-V SEMICONDUCTOR BONDING FOR MONOLITHIC OPTOELECTRONIC INTEGRATION
Document Type and Number:
WIPO Patent Application WO2001006546
Kind Code:
A3
Abstract:
In a method for bonding a silicon substrate to a III-V material substrate, a silicon substrate is contacted together with a III-V material substrate and the contacted substrates are annealed at a first temperature that is above ambient temperature, e.g. at a temperature of between about 150 DEG C and about 350 DEG C. The silicon substrate is then thinned. This bonding process enables the fabrication of thick, strain-sensitive and defect-sensitive optoelectronic devices on the optimum substrate for such, namely, a thick III-V material substrate, while enabling the fabrication of silicon electronic devices in a thin silicon layer, resulting from the thinned Si substrate, that is sufficient for such fabrication but which has been thinned to eliminate thermally-induced stress in both the Si and III-V materials. The III-V material substrate thickness thereby provides the physical strength of the composite substrate structure, while the thinned silicon substrate minimizes stress in the composite structure.
Inventors:
FONSTAD CLIFTON G JR
LONDON JOANNA M
AHADIAN JOSEPH F
LONDON JOANNA M
AHADIAN JOSEPH F
Application Number:
PCT/US2000/019455
Publication Date:
June 07, 2001
Filing Date:
July 14, 2000
Export Citation:
Assignee:
MASSACHUSETTS INST TECHNOLOGY (US)
International Classes:
G02B6/124; H01L21/18; H01L21/20; H01L21/762; H01L21/8252; H01L21/8258; H01L27/06; (IPC1-7): H01L21/18; H01L21/20; H01L21/762; H01L21/8258
Foreign References:
| US5346848A | 1994-09-13 | |||
| US5849627A | 1998-12-15 | |||
| EP0797248A2 | 1997-09-24 | |||
| US5407856A | 1995-04-18 | |||
| DE4210859C1 | 1993-06-09 | |||
| US5606186A | 1997-02-25 | |||
| US5386137A | 1995-01-31 |
Other References:
LEE M -K ET AL: "DIRECT BONDING OF GALLIUM ARSENIDE ON SILICON", JAPANESE JOURNAL OF APPLIED PHYSICS,PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO,JP, vol. 38, no. 7A, July 1999 (1999-07-01), pages 4041 - 4042, XP000877723, ISSN: 0021-4922
ERSEN A ET AL: "DIRECT BONDING OF GAAS FILMS ON SILICON CIRCUITS BY EPITAXIAL LIFTOFF", SOLID STATE ELECTRONICS,GB,ELSEVIER SCIENCE PUBLISHERS, BARKING, vol. 36, no. 12, 1 December 1993 (1993-12-01), pages 1731 - 1739, XP000414031, ISSN: 0038-1101
KRISHNAMOORTHY A V ET AL: "PHOTONIC PAGE BUFFER BASED ON GAAS MULTIPLE-QUANTUM-WELL MODULATORS BONDED DIRECTLY OVER ACTIVE SILICON COMPLEMENTARY-METAL-OXIDE-SEMICON DUCTOR (CMOS) CIRCUITS", APPLIED OPTICS,US,OPTICAL SOCIETY OF AMERICA,WASHINGTON, vol. 35, no. 14, 10 May 1996 (1996-05-10), pages 2439 - 2448, XP000590036, ISSN: 0003-6935
ERSEN A ET AL: "DIRECT BONDING OF GAAS FILMS ON SILICON CIRCUITS BY EPITAXIAL LIFTOFF", SOLID STATE ELECTRONICS,GB,ELSEVIER SCIENCE PUBLISHERS, BARKING, vol. 36, no. 12, 1 December 1993 (1993-12-01), pages 1731 - 1739, XP000414031, ISSN: 0038-1101
KRISHNAMOORTHY A V ET AL: "PHOTONIC PAGE BUFFER BASED ON GAAS MULTIPLE-QUANTUM-WELL MODULATORS BONDED DIRECTLY OVER ACTIVE SILICON COMPLEMENTARY-METAL-OXIDE-SEMICON DUCTOR (CMOS) CIRCUITS", APPLIED OPTICS,US,OPTICAL SOCIETY OF AMERICA,WASHINGTON, vol. 35, no. 14, 10 May 1996 (1996-05-10), pages 2439 - 2448, XP000590036, ISSN: 0003-6935
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