Title:
SILICON-ON-INSULATOR TRANSVERSE DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/202275
Kind Code:
A1
Abstract:
The present application relates to a silicon-on-insulator transverse device and a manufacturing method therefor. The device comprises: a substrate; a buried dielectric layer provided on the substrate; a drift region provided on the buried dielectric layer; a vertical conductive structure extending downwards from the drift region to the buried dielectric layer; a low-K dielectric provided in the buried dielectric layer and surrounding the bottom of the vertical conductive structure; and a dielectric layer provided on a side surface of the vertical conductive structure and located between the vertical conductive structure and the drift region and above the low-K dielectric.
Inventors:
LIU TENG (CN)
ZHANG WENTONG (CN)
HE NAILONG (CN)
ZHANG ZHILI (CN)
SONG HUA (CN)
ZHANG WENTONG (CN)
HE NAILONG (CN)
ZHANG ZHILI (CN)
SONG HUA (CN)
Application Number:
PCT/CN2023/081575
Publication Date:
October 26, 2023
Filing Date:
March 15, 2023
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L29/78; H01L21/336; H01L21/762; H01L23/367; H01L23/373; H01L27/12
Foreign References:
| CN115020472A | 2022-09-06 | |||
| CN113611750A | 2021-11-05 | |||
| JPH08181321A | 1996-07-12 | |||
| US5777365A | 1998-07-07 | |||
| US20080237631A1 | 2008-10-02 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
Download PDF: