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Title:
SILICON NITRIDE CHEMICAL-MECHANICAL POLISHING SOLUTION
Document Type and Number:
WIPO Patent Application WO/2018/099110
Kind Code:
A1
Abstract:
A silicon nitride chemical-mechanical polishing solution, comprising abrasive particles, a compound containing one or more carboxyl groups, and an anionic surfactant containing long alkyl chains. The silicon nitride chemical-mechanical polishing solution can suppress a Teos polishing rate while increasing a SiN polishing rate, has a high SiN/Teos selectivity ratio, and can reduce the defects on the surface of a polished substrate.

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Inventors:
ZHOU WENTING (CN)
Application Number:
PCT/CN2017/094362
Publication Date:
June 07, 2018
Filing Date:
July 25, 2017
Export Citation:
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Assignee:
ANJI MICROELECTRONICS TECH SHANGHAI CO LTD (CN)
International Classes:
C09G1/02
Foreign References:
CN1434491A2003-08-06
CN101906270A2010-12-08
CN102051128A2011-05-11
CN101389722A2009-03-18
US20030104699A12003-06-05
Attorney, Agent or Firm:
BEIJING DACHENG LAW OFFICES, LLP (CN)
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