Title:
SILICON NITRIDE COMPOSITE MATERIAL AND PROBE-GUIDING PART
Document Type and Number:
WIPO Patent Application WO/2023/084957
Kind Code:
A1
Abstract:
The present invention provides a silicon nitride composite material that stably has a thermal expansion coefficient and high strength equivalent to a silicon wafer, and a probe-guiding part. The silicon nitride composite material of the present invention contains 35-70 mass% inclusive of Si3N4, 25-60 mass% inclusive of ZrO2 and 0.5 mass% or more and less than 5 mass% of at least one selected from among MgO, SiO2, Al2O3 and Y2O3, and has a peak intensity ratio [Iβ/(Iα + Iβ)] of 0.05-0.80 inclusive, wherein Iα stands for the (210) plane peak intensity of αSi3N4 and Iβ stands for the (210) plane peak intensity of βSi3N4, each measured by powder X-ray diffractometry. The probe-guiding part of the present invention is provided with a plate-shaped body portion using the aforesaid silicon nitride composite material and a plurality of through holes and/or slits through which a probe is inserted in the main body portion.
Inventors:
MATANO TAIJI (JP)
HAMASAKI TOSHIO (JP)
SATO YUTAKA (JP)
HAMASAKI TOSHIO (JP)
SATO YUTAKA (JP)
Application Number:
PCT/JP2022/037431
Publication Date:
May 19, 2023
Filing Date:
October 06, 2022
Export Citation:
Assignee:
KROSAKIHARIMA CORP (JP)
International Classes:
C04B35/596; C04B35/488; G01R1/06; G01R1/073
Domestic Patent References:
| WO2019093370A1 | 2019-05-16 |
Foreign References:
| JPS6230666A | 1987-02-09 | |||
| JPS58213677A | 1983-12-12 | |||
| JPH06152085A | 1994-05-31 | |||
| JPH02503192A | 1990-10-04 |
Attorney, Agent or Firm:
EIWA PATENT FIRM (JP)
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