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Title:
SILICON NITRIDE SINTERED SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2022/004755
Kind Code:
A1
Abstract:
Provided is a silicon nitride sintered substrate which is not polished yet after the sintering of a silicon nitride powder, and which is reduced in the occurrence of problems such as the problem of contamination with a boron nitride powder used as a mold release material or the like and a problem in bonding strength, insulation resistance and the like upon the lamination of a metal layer or the like, all of which are associated with a net-like structure formed by silicon nitride crystals on the surface of the silicon nitride sintered substrate.　The silicon nitride substrate is not polished after sintering, in which the cumulative pore volume of pores each having a pore diameter of 1 to 10 μm as measured by a mercury intrusion porosimetry method is 7.0 × 10-5 mL/cm2 or less, and it is preferred that the Ra value is 0.6 μm or less and the arithmetic mean peak curvature (Spc) value at a peak top point is 4.5 [1/mm] or less in the surface of the silicon nitride sintered substrate.

Inventors:
MITSUMURA NORIHIRA (JP)
KUSANO DAI (JP)
KAWAI HIDEAKI (JP)
Application Number:
PCT/JP2021/024643
Publication Date:
January 06, 2022
Filing Date:
June 29, 2021
Export Citation:
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Assignee:
TOKUYAMA CORP (JP)
International Classes:
C01B21/068; C04B35/587; H01L23/15; H05K1/03
Domestic Patent References:
WO2018110564A12018-06-21
WO2019167879A12019-09-06
WO2019167879A12019-09-06
Foreign References:
JP2013182983A2013-09-12
JP2012218983A2012-11-12
JP2002201076A2002-07-16
JP2002128569A2002-05-09
JP2000264608A2000-09-26
Other References:
JAPANESE SOCIETY OF MARINE ENGINEERS, vol. 28, no. 9, September 1993 (1993-09-01), pages 548 - 556
C.P. GAZZARAD.R. MESSIER, AM. CERAM. SOC. BULL., vol. 56, 1977, pages 777 - 780
Attorney, Agent or Firm:
ONO, Hisazumi et al. (JP)
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