Title:
SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD
Document Type and Number:
WIPO Patent Application WO/2020/044974
Kind Code:
A1
Abstract:
A silicon nitride substrate which comprises a silicon nitride sintered body comprising silicon nitride crystal particles and a grain boundary phase, wherein the silicon nitride substrate being characterized by having a thickness of 0.4 mm or less, and also characterized in that, in an arbitrary cross section of the silicon nitride sintered body or the surface of the silicon nitride sintered body, the number-based percentage of silicon nitride crystal particles each having a dislocation defect part therein in silicon nitride crystal particles present in a unit area having a size of 10 μm × 10 μm is 0 to 20% inclusive. It becomes possible to improve etching resistance during the manufacture of a circuit board from the silicon nitride substrate.
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Inventors:
AOKI KATSUYUKI (JP)
FUKASAWA TAKAYUKI (JP)
MOMMA JUN (JP)
IWAI KENTARO (JP)
FUKASAWA TAKAYUKI (JP)
MOMMA JUN (JP)
IWAI KENTARO (JP)
Application Number:
PCT/JP2019/030712
Publication Date:
March 05, 2020
Filing Date:
August 05, 2019
Export Citation:
Assignee:
TOSHIBA KK (JP)
TOSHIBA MATERIALS CO LTD (JP)
TOSHIBA MATERIALS CO LTD (JP)
International Classes:
H05K1/03; C04B35/584; H01L23/13
Domestic Patent References:
| WO2016117553A1 | 2016-07-28 | |||
| WO2015060274A1 | 2015-04-30 | |||
| WO2017056360A1 | 2017-04-06 |
Other References:
See also references of EP 3846596A4
Attorney, Agent or Firm:
HYUGAJI, Masahiko et al. (JP)
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