Title:
SILICON OXIDE FILM, MATERIAL FOR GAS BARRIER FILM, AND METHOD FOR MANUFACTURING SILICON OXIDE FILM
Document Type and Number:
WIPO Patent Application WO/2020/209202
Kind Code:
A1
Abstract:
Provided is a silicon oxide film that exhibits excellent gas barrier properties even as a thin film. The silicon oxide film is characterized by satisfying the following conditions (1) and (2). (1) The water vapor transmission rate (WVTR) at a film thickness of 500nm or less is at most 9.0×10-3g/m2·day. (2) The carbon concentration in the film as measured by X-ray photoelectron spectroscopy (XPS) is at most 3.0atom%.
Inventors:
SUGIMOTO SHUN (JP)
CHIBA HIROKAZU (JP)
TANAKA RYOJI (JP)
FUKAWA MARINA (JP)
CHIBA HIROKAZU (JP)
TANAKA RYOJI (JP)
FUKAWA MARINA (JP)
Application Number:
PCT/JP2020/015354
Publication Date:
October 15, 2020
Filing Date:
April 03, 2020
Export Citation:
Assignee:
TOSOH CORP (JP)
SAGAMI CHEM RES INST (JP)
SAGAMI CHEM RES INST (JP)
International Classes:
C23C16/42; B32B9/00; B32B27/00; C07F7/18; C23C16/18; C23C16/505
Domestic Patent References:
| WO2014203892A1 | 2014-12-24 |
Foreign References:
| JP2016176091A | 2016-10-06 | |||
| JP2012086378A | 2012-05-10 | |||
| JP2014205855A | 2014-10-30 |
Attorney, Agent or Firm:
T.S. PARTNERS et al. (JP)
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